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HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D1 H11D2 H11D3 H11D4 4N38
FEATURES
* High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V * High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute * Underwriters Laboratory (UL) recognized File# E90700
ANODE 1
6 BASE
APPLICATIONS
* * * * * Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25C Derate above 25C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1s pulse, 300pps) *LED Power Dissipation @ TA = 25C Derate above 25C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 80 6.0 3.0 150 1.41 Units C C C mW mW/C mA V A mW mW/C
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ABSOLUTE MAXIMUM RATINGS (Cont.)
Parameter DETECTOR *Power Dissipation @ TA = 25C Derate linearly above 25C H11D1 - H11D2 *Collector to Emitter Voltage H11D3 - H11D4 4N38 H11D1 - H11D2 *Collector Base Voltage H11D3 - H11D4 4N38 *Emitter to Collector Voltage Collector Current (Continuous) H11D1 - H11D2 H11D3 - H11D4 VECO VCBO VCER PD Symbol Value 300 4.0 300 200 80 300 200 80 7 100 mA V Units mW mW/C
ELECTRICAL CHARACTERISTICS
Characteristic EMITTER *Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance *Reverse Leakage Current DETECTOR *Breakdown Voltage Collector to Emitter *Collector to Base Emitter to Base Emitter to Collector *Leakage Current Collector to Emitter (RBE = 1 M")
(TA = 25C Unless otherwise specified.)
INDIVIDUAL COMPONENT CHARACTERISTICS
Test Conditions (IF = 10 mA) Symbol VF !VF !TA BVR CJ IR BVCER BVCEO BVCBO BVEBO BVECO Device ALL ALL ALL ALL ALL ALL H11D1/2 H11D3/4 4N38 H11D1/2 H11D3/4 4N38 4N38 ALL H11D1/2 ICER H11D3/4 ICEO 4N38 6 Min Typ** 1.15 -1.8 25 50 65 0.05 Max 1.5 Unit V mV/C V pF pF A
(IR = 10 A) (VF = 0 V, f = 1 MHz) (VF = 1 V, f = 1 MHz) (VR = 6 V) (RBE = 1 M") (IC = 1.0 mA, IF = 0) (No RBE) (IC = 1.0 mA) (IC = 100 A, IF = 0)
10
(IE = 100 A , IF = 0) (VCE = 200 V, IF = 0, TA = 25C) (VCE = 200 V, IF = 0, TA = 100C) (VCE = 100 V, IF = 0, TA = 25C) (VCE = 100 V, IF = 0, TA = 100C) (No RBE) (VCE = 60 V, IF = 0, TA = 25C)
300 200 80 300 200 80 7 7
V
10 100 250 100 250 50 nA A nA A nA
Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25C
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
TRANSFER CHARACTERISTICS
DC Characteristic EMITTER Current Transfer Ratio Collector to Emitter (IF = 10 mA, VCE = 10 V) (RBE = 1 M") (IF = 10 mA, VCE = 10 V) (IF = 10 mA, IC = 0.5 mA) *Saturation Voltage (RBE = 1 M") (IF = 20 mA, IC = 4 mA) VCE (SAT) CTR Test Conditions Symbol Device H11D1 H11D2 H11D3 H11D4 4N38 H11D1/2/3/4 4N38 1 (10) 2 (20) 0.1 0.40 1.0 V 2 (20) mA (%) Min Typ** Max Unit
TRANSFER CHARACTERISTICS
Characteristic SWITCHING TIMES Non-Saturated Turn-on Time Turn-off Time Test Conditions (VCE =10 V, ICE = 2 mA) (RL = 100 ") Symbol ton toff Device ALL ALL Min Typ** 5 5 Max Unit s
ISOLATION CHARACTERISTICS
Characteristic Isolation Voltage Isolation Resistance Isolation Capacitance Test Conditions (II-O #$1 A, 1 min.) (VI-O = 500 VDC) (f = 1 MHz) Symbol VISO RISO CISO Device ALL ALL ALL Min 5300 7500 1011 0.5 Typ** Max Unit (VACRMS) (VACPEAK) " pF
Notes * Parameters meet or exceed JEDEC registered data (for 4N38 only) ** All typical values at TA = 25C
Fig.1 LED Forward Voltage vs. Forward Current
1.8 1.7
Fig.2 Normalized Output Characteristics
NORMALIZED ICER - OUTPUT CURRENT
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C IF = 50 mA 1 IF = 10 mA
VF - FORWARD VOLTAGE (V)
10
1.6 1.5 1.4 1.3 TA = 25C 1.2 1.1 1.0 1 TA = 100C 10 100
TA = 55C
IF = 5 mA 0.1
0.01 0.1 1 10 100
IF - LED FORWARDCURRENT (mA)
VCE - COLLECTOR VOLTAGE (V)
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Fig.3 Normalized Output Current vs. LED Input Current
10
Fig.4 Normalized Output Current vs. Temperature
NORMALIZED ICER - OUTPUT CURRENT
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C
NORMALIZED ICER - OUTPUT CURRENT
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C 1
IF = 20 mA IF = 10 mA 1 IF = 5 mA
0.1
0.01 1 10
0.1 -60
-40
-20
0
20
40
60
80
100
IF - LED INPUT CURRENT (mA)
TA - AMBIENT TEMPERATURE (C)
Fig.5 Normalized Dark Current vs. Ambient Temperature
NORMALIZED ICBO - COLLECTOR-BASE CURRENT
10 9 8 7 6 5 4 3 2 1 Normalized to: VCE = 100 V RBE = 106 TA = 25C
Normalized Collector-Base Current vs. Temperature
Normalized to: VCE = 10 V IF = 10 mA RBE = 106 TA = 25C
NORMALIZED ICER - DARK CURRENT
10000
IF = 50 mA
1000 VCE = 300 V 100 VCE = 100 V VCE = 50 V 10
1
IF = 10 mA
0.1 10
20
30
40
50
60
70
80
90
100
110
0 -60
IF = 5 mA -40 -20 0 20 40 60 80 100
TA - AMBIENT TEMPERATURE (C)
TA - AMBIENT TEMPERATURE (C)
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
Package Dimensions (Through Hole)
3 2 1
PIN 1 ID.
Package Dimensions (Surface Mount)
0.350 (8.89) 0.330 (8.38)
3
0.270 (6.86) 0.240 (6.10)
2
1
PIN 1 ID.
0.270 (6.86) 0.240 (6.10)
4
SEATING PLANE
5
0.350 (8.89) 0.330 (8.38)
6
4 5 6
0.070 (1.78) 0.045 (1.14)
0.070 (1.78) 0.045 (1.14)
0.300 (7.62) TYP
0.200 (5.08) 0.135 (3.43)
0.200 (5.08) 0.165 (4.18)
0.154 (3.90) 0.100 (2.54) 0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0 to 15 0.300 (7.62) TYP
0.016 (0.41) 0.008 (0.20) 0.020 (0.51) MIN 0.100 (2.54) TYP
0.022 (0.56) 0.016 (0.41)
0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4"Lead Spacing)
3 2 1
PIN 1 ID.
Recommended Pad Layout for Surface Mount Leadform
0.270 (6.86) 0.240 (6.10)
0.070 (1.78)
4
5
6
0.060 (1.52)
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
0.415 (10.54)
0.100 (2.54) 0.030 (0.76)
SEATING PLANE
0.295 (7.49)
0.004 (0.10) MIN
0.200 (5.08) 0.135 (3.43)
0.154 (3.90) 0.100 (2.54)
0.016 (0.40) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP
0 to 15 0.400 (10.16) TYP
NOTE All dimensions are in inches (millimeters)
8/9/00
200046A
HIGH VOLTAGE PHOTOTRANSISTOR OPTOCOUPLERS
H11D1, H11D2, H11D3, H11D4, 4N38
ORDERING INFORMATION
Option
S SD W 300 300W 3S 3SD
Order Entry Identifier
.S .SD .W .300 .300W .3S .3SD
Description
Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel
QT Carrier Tape Specifications ("D" Taping Orientation)
12.0 0.1 4.85 0.20 4.0 0.1 0.30 0.05 4.0 0.1 O1.55 0.05 1.75 0.10
7.5 0.1 13.2 0.2 16.0 0.3 9.55 0.20
0.1 MAX
10.30 0.20
O1.6 0.1
User Direction of Feed
NOTE All dimensions are in millimeters
8/9/00
200046A
MARKING INFORMATION
1
H11D1 V XX YY K
3 4 5
2 6
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) Two digit year code, e.g., `03' Two digit work week ranging from `01' to `53' Assembly package code
Reflow Profile (Black Package, No Suffix)
300 Temperature (C) 250 200 150 100 50 0 0 0.5 1 1.5 2 2.5 3 225 C peak
215C, 10-30 s
Time above 183C, 60-150 sec
Ramp up = 3C/sec 3.5 4 4.5
* Peak reflow temperature: 225C (package surface temperature) * Time of temperature higher than 183C for 60-150 seconds * One time soldering reflow is recommended
Time (Minute)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I13

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